Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-27
2000-08-22
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257331, 257332, 257341, 257390, H01L 21336, H01L 2976
Patent
active
061076619
ABSTRACT:
A concave channel type DMOS structure having an improved gate-to-source breakdown voltage are disclosed. By establishing a curvature at a corner portion of a lattice-like pattern in a groove portion for forming the concave channel structure, the shape of the tip of a three-dimensionally projecting portion of a semiconductor region determined by a plane angle of the corner portion in the lattice-like pattern and an inclination of the groove portion is rounded. That is, a three-dimensionally sharpened corner portion in the concave channel structure is rounded, and thereby electric field concentration at the corner portion is suppressed.
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Okabe Naoto
Yamamoto Tsuyoshi
Duong Hung Van
Nippondenso Co. Ltd.
Picard Leo P.
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