Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2006-11-07
2006-11-07
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C438S328000, C438S425000, C438S431000, C257S499000, C257S506000
Reexamination Certificate
active
07132729
ABSTRACT:
The present invention provides a semiconductor device formed with a diode array together with bipolar transistors, which is capable of preventing the occurrence of crystal defects developed in cross patterns in deep trench regions and improving device yields, and a method of manufacturing the semiconductor device. A semiconductor device includes a LOCOS oxide film which isolates a plurality of diodes in an X direction, and deep trenches which isolate the plurality of diodes in a Y direction. The depth of each of the deep trenches is deeper than a high density layer embedded below a collector layer of each bipolar transistor. A shallow trench may be used as an alternative to the LOCOS oxide film.
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Jr. Carl Whitehead
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
Rodgers Colleen E.
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