Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2006-04-25

2006-04-25

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S421000, C438S457000

Reexamination Certificate

active

07033868

ABSTRACT:
A high-speed, low-power-consumption semiconductor device has a thin-film Si layer with a source/drain formed therein. The thin-film Si layer is curved from a region directly below a gate electrode toward a region near the source/drain. The curved thin-film Si layer develops strains in a channel region disposed directly below the gate electrode sandwiched by the source/drain in the thin-film Si layer, for thereby increasing a carrier mobility. A cavity is defined below the curved thin-film Si layer for reducing a parasitic capacitance due to a pn junction.

REFERENCES:
patent: 6881635 (2005-04-01), Chidambarrao et al.
patent: 2005/0045947 (2005-03-01), Chen et al.
Patent Abstracts of Japan No. 08-186249 (Abstract).
Patent Abstracts of Japan No. 05-121450 (Abstract).
Patent Abstracts of Japan No. 2000-012791 (Abstract).
Patent Abstracts of Japan No. 2000-022158 (Abstract).
Patent Abstracts of Japan No. 2000-286418 (Abstract).

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