Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

2005-06-14

2005-06-14

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S760000, C438S761000, C438S769000, C438S770000, C438S773000, C438S775000

Reexamination Certificate

active

06905980

ABSTRACT:
A semiconductor device is produced by forming a gate oxide film on a silicon substrate, forming a gate electrode on the gate oxide film, forming a nitrogen-containing oxide film on the silicon substrate and gate electrode in an N2O gas or an NO gas, forming a BPSG film on the nitrogen-containing oxide film, and carrying out a reflow process on the BPSG film in a water vapor atmosphere. During the reflow process, the nitrogen-containing oxide film that has no hydrogen atoms prevents the penetration and diffusion of oxygen and hydrogen atoms into the silicon substrate and gate electrode, thereby preventing the oxidization of the silicon substrate and gate electrode. No hydrogen atoms diffuse into the gate oxide film, and therefore, the reliability of the gate oxide film is secured.

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