Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

1993-03-18

1994-08-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257532, 257776, 257903, H01L 2701, H01L 2702

Patent

active

053430662

ABSTRACT:
In a semiconductor device having a thin film transistor in which a gate insulator film and a semiconductor layer are formed on a gate electrode layer, and a portion of the semiconductor layer is connected to a specific gate electrode layer through a contact hole formed in the gate insulator film, a static random access memory is constituted by memory cells in each of which a conductive layer stacked on the upper layer side of the semiconductor layer through an insulator layer is inserted in the contact hole formed in the gate insulator film, and the portion of the semiconductor layer is electrically connected to the specific gate electrode layer through the conductive layer.

REFERENCES:
patent: 5194749 (1993-03-01), Meguro et al.

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