Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-08-15
2009-10-27
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S418000, C257S419000, C257S619000, C257SE29324, C073S514340
Reexamination Certificate
active
07608900
ABSTRACT:
An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface pattern, in the main rear surface, a through-hole being formed because of connection between at least parts of the first groove portion and the second groove portion and at least one groove width variation portion being formed in at least one of inner walls of the first groove portion. An offset of the rear surface pattern to the front surface pattern can be inspected easily by existence of the groove width variation portion.
REFERENCES:
patent: 5471086 (1995-11-01), Ipposhi et al.
patent: 6369931 (2002-04-01), Funk et al.
patent: 6774445 (2004-08-01), Mutoh et al.
patent: 7078778 (2006-07-01), Schenk
patent: 2005/0274191 (2005-12-01), Hasegawa et al.
patent: 2007/0215966 (2007-09-01), Ikegami
patent: 2007/0261490 (2007-11-01), Kai
Oki Semiconductor Co., Ltd.
Parker Allen L
Sefer A.
Volentine & Whitt P.L.L.C.
LandOfFree
Semiconductor device and method of manufacturing and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4094042