Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-03-09
2010-06-22
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S197000, C438S594000, C257S411000, C257S412000
Reexamination Certificate
active
07741201
ABSTRACT:
The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.
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Inoue Masao
Mori Ken-ichi
Sakashita Shinsuke
Yugami Jiro
Karimy Mohammad T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Renesas Technology Corp.
Smith Bradley K
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