Semiconductor device and method of manufacturing a...

Details Semiconductor device and method of manufacturing a... Semiconductor device and method of manufacturing a...

2006-12-06

2009-06-30

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S627000, C438S637000, C257SE21597, C257SE21576

Reexamination Certificate

active

07553759

ABSTRACT:
A semiconductor device may include the following. A diffusion barrier formed over a semiconductor substrate having a conductive layer. An etching stop layer formed over a diffusion barrier. Inter-metal dielectric (IMD) layers (e.g. having via holes formed over an etching stop layer and trenches wider than the via holes). Metal interconnections that fill via holes and trenches. Via holes in IMD layers may pass through a diffusion barrier and an etching stop layer to connect to a conductive layer in a semiconductor substrate.

REFERENCES:
patent: 6319821 (2001-11-01), Liu et al.
patent: 6417112 (2002-07-01), Peyne et al.
patent: 6787446 (2004-09-01), Enomoto et al.
patent: 6800548 (2004-10-01), Andideh
patent: 7365021 (2008-04-01), Kim et al.
patent: 2004/0161924 (2004-08-01), Chen et al.

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