Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-20
2007-02-20
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S760000, C257S774000, C257S751000, C257SE23144, C257SE23161, C257SE23167
Reexamination Certificate
active
11048929
ABSTRACT:
A semiconductor device200comprises a SiCN film202formed on a semiconductor substrate (not shown), a first SiOC film204formed thereon, a SiCN film208formed thereon, a second SiOC film210formed thereon, a SiO2film212and a SiCN film214formed thereon. The first SiOC film204has a barrier metal layer216and via218formed therein, and the second SiOC film210has a barrier metal layer220and wiring metal layer222formed therein. Carbon content of the second SiOC film210is adjusted larger than that of the first SiOC film204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.
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Miyamoto Hidenobu
Morita Noboru
Ohto Koichi
Sasaki Yoichi
Usami Tatsuya
Anya Igwe U.
Baumeister B. William
NEC Electronics Corporation
Young & Thompson
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