Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-18
2011-01-18
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S394000, C257S406000, C257S652000, C257SE29161, C257SE29162, C257SE29165
Reexamination Certificate
active
07872316
ABSTRACT:
Disclosed herein is a semiconductor device including a gate insulating film formed over a semiconductor substrate, and a gate electrode formed over the gate insulating film, wherein the gate insulating film is so provided as to protrude from both sides of the gate electrode, and the gate electrode includes a wholly silicided layer.
REFERENCES:
patent: 7183613 (2007-02-01), Zhu et al.
patent: 7579227 (2009-08-01), Hirase et al.
patent: 2005/0272235 (2005-12-01), Wu et al.
patent: 2006/0166424 (2006-07-01), Schaeffer et al.
patent: 2006/0237803 (2006-10-01), Zhu et al.
patent: 61-006867 (1986-01-01), None
patent: 11-284179 (1999-10-01), None
patent: 2003-258241 (2003-09-01), None
patent: 2005-012075 (2005-01-01), None
patent: 2007-059881 (2007-08-01), None
Motofumi Saitoh et al.; Strain Controlled CMOSFET with Phase Controlled Full-silicide (PC-FUSI)/HfSiON Gate Stack Structure for 45nm-NODE LSTP Devices; 2006 Symposium on VLSI Technology Digest of Technical Papers.
Office Action issued by the Japanese Patent Office on May 26, 2009 in connection to related Japanese Patent Application No. 2007-131452.
Mandala Victor A
SNR Denton US LLP
Sony Corporation
LandOfFree
Semiconductor device and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2663356