Semiconductor device and method of manufacturing...

Details Semiconductor device and method of manufacturing... Semiconductor device and method of manufacturing...

2010-02-03

2011-12-06

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S631000, C438S637000, C257SE21575, C257SE21580, C257SE21582

Reexamination Certificate

active

08071468

ABSTRACT:
There is provided a method of manufacturing a semiconductor device, the method including performing at least one of: processing, when forming the first redistribution layer, of forming the first electrically conductive material layer by growing the first electrically conductive material using electroplating, and polishing the first resist film and the first electrically conductive material layer from the main surface side to flatten their surfaces; and processing, when forming the second redistribution layer, forming the second electrically conductive material layer by growing the second electrically conductive material using electroplating, and polishing the second resist film and the second electrically conductive material layer from the main surface side to flatten their surfaces.

REFERENCES:
patent: 2006/0220215 (2006-10-01), Lee
patent: 2007/0241460 (2007-10-01), Mis et al.
patent: 2002-252310 (2002-09-01), None

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