Semiconductor device and method of manufacturing...

Details Semiconductor device and method of manufacturing... Semiconductor device and method of manufacturing...

2007-08-29

2009-10-20

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29345, C257SE21409, C438S589000

Reexamination Certificate

active

07605424

ABSTRACT:
A semiconductor device including: a semiconductor region having a first semiconductor face and a second semiconductor face connected to the first semiconductor face and having an inclination with respect to the first semiconductor face; a gate insulating film formed on the first and on the second semiconductor faces; a gate electrode formed on the gate insulating film including a part on a boundary between the first semiconductor face and the second semiconductor face; a source impurity region formed in the semiconductor region so as to overlap the gate electrode within the first semiconductor face with the gate insulating film interposed between the source impurity region and the gate electrode; and a drain impurity region formed in the semiconductor region directly under the second semiconductor face at least.

REFERENCES:
patent: 6617212 (2003-09-01), Cho et al.
patent: 6664592 (2003-12-01), Inumiya et al.
patent: 6974730 (2005-12-01), Diaz et al.
patent: 2003/0006457 (2003-01-01), Nishinohara
patent: 49-126281 (1974-03-01), None
patent: 50-8483 (1975-01-01), None
patent: 58-166758 (1983-10-01), None
patent: 03-052263 (1991-03-01), None
patent: 04-171762 (1992-06-01), None
patent: 04-245480 (1992-09-01), None
patent: 08-213606 (1996-08-01), None
patent: 2000-082813 (2000-03-01), None
patent: 2001-144290 (2001-05-01), None
patent: 2001-284468 (2001-10-01), None
patent: 2001-326351 (2001-11-01), None
Japanese Office Action issued on Nov. 25, 2008, corresponding to JP Patent Appl. No. 2006-238626.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4124955