Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2006-10-24
2006-10-24
Potter, Roy Karl (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S778000, C438S619000
Reexamination Certificate
active
07125810
ABSTRACT:
The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.
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Office Action from Korean counterpart application 10-2003 0004220, dated Nov. 9, 2005 (with copy of English translation).
Morimoto Hiroyuki
Muta Tadayoshi
Saito Riichi
Suto Tadanori
Tachikawa Jin
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Potter Roy Karl
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