Semiconductor device and method of manufacture thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S341000, C257SE29256, C257SE21417, C438S298000

Reexamination Certificate

active

07986004

ABSTRACT:
In a high withstand voltage transistor of a LOCOS offset drain type having a buried layer, a plurality of stripe-shaped diffusion layers are formed below a diffusion layer ranging from an offset layer to a drain layer and a portion between the drain region and the buried layer is depleted completely; thus, a withstand voltage between the drain region and the buried layer is improved. By the formation of the stripe-shaped diffusion layers, the drain region becomes widened; thus, on-resistance is reduced. Further, the buried layer is made high in concentration so as to sufficiently suppress an operation of a parasitic bipolar transistor.

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patent: 2004/0113210 (2004-06-01), Chau et al.
patent: 2005/0045922 (2005-03-01), Ahlers et al.
patent: 2008/0093641 (2008-04-01), Ludikhuize et al.
patent: 60-20560 (1985-02-01), None

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