Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257SE29256, C257SE21417, C438S298000
Reexamination Certificate
active
07986004
ABSTRACT:
In a high withstand voltage transistor of a LOCOS offset drain type having a buried layer, a plurality of stripe-shaped diffusion layers are formed below a diffusion layer ranging from an offset layer to a drain layer and a portion between the drain region and the buried layer is depleted completely; thus, a withstand voltage between the drain region and the buried layer is improved. By the formation of the stripe-shaped diffusion layers, the drain region becomes widened; thus, on-resistance is reduced. Further, the buried layer is made high in concentration so as to sufficiently suppress an operation of a parasitic bipolar transistor.
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Nishimura Hisaji
Ogura Hiroyoshi
Ohdaira Akira
Naraghi Ali
Panasonic Corporation
Steptoe & Johnson LLP
Such Matthew W
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