Semiconductor device and method of manufacture thereof

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction

Reexamination Certificate

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C438S314000, C438S320000

Reexamination Certificate

active

10398525

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device which includes an amorphous semiconductor film forming treatment of supplying a starting material gas containing germanium to a semiconductor substrate, thereby forming an amorphous semiconductor film containing the germanium on the semiconductor substrate. Further, it also provides a semiconductor device of a novel structure manufactured by the manufacturing method.

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patent: 2006/0003515 (2006-01-01), Chang

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