Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-01-23
2007-01-23
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S314000, C438S320000
Reexamination Certificate
active
10398525
ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device which includes an amorphous semiconductor film forming treatment of supplying a starting material gas containing germanium to a semiconductor substrate, thereby forming an amorphous semiconductor film containing the germanium on the semiconductor substrate. Further, it also provides a semiconductor device of a novel structure manufactured by the manufacturing method.
REFERENCES:
patent: 4224520 (1980-09-01), Greene et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5648280 (1997-07-01), Kato
patent: 5906708 (1999-05-01), Robinson et al.
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6362063 (2002-03-01), Maszara et al.
patent: 6396147 (2002-05-01), Adachi et al.
patent: 6399450 (2002-06-01), Yu
patent: 6780725 (2004-08-01), Fujimaki
patent: 2002/0081861 (2002-06-01), Robinson et al.
patent: 2003/0219952 (2003-11-01), Fujimaki
patent: 2006/0003515 (2006-01-01), Chang
Andou Toshio
Inoue Yousuke
Miyauchi Akihiro
Hitachi , Ltd.
Schillinger Laura M.
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