Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-29
2007-05-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S317000, C257S318000, C257S319000, C257S032000, C257S034000, C361S185000
Reexamination Certificate
active
11064453
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an electrically rewritable semiconductor memory cell provided on the semiconductor substrate, the memory cell comprising an island semiconductor portion provided on the surface of the semiconductor substrate or above the semiconductor substrate, a first insulating film provided on a top surface of the island semiconductor portion, a second insulating film provided on a side surface of the island semiconductor portion and being smaller in thickness than the first insulating film, and a charge storage layer provided on the side surface of the island semiconductor portion with the second insulating film interposed therebetween and on a side surface of the first insulating film, a third insulating film provided on the charge storage layer, and a control gate electrode provided on the third insulating film.
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Hagishima Daisuke
Hieda Katsuhiko
Erdem Fazli
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Pert Evan
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