Semiconductor device and method of manufacture

Details Semiconductor device and method of manufacture Semiconductor device and method of manufacture

2007-07-17

2007-07-17

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

11144569

ABSTRACT:
A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) (100, 200, 300, 400) that includes a semiconductor substrate (110, 210, 310, 410) having a first conductivity type and buried semiconductor region (115, 215, 315, 415) having a second conductivity type located above the semiconductor substrate. The IGBT further includes a first semiconductor region (120, 220, 320, 420) having the first conductivity type located above the buried semiconductor region, a second semiconductor region (130, 230, 330, 430) having the first conductivity type located above the first semiconductor region, a third semiconductor region (140, 240, 340, 440) having the second conductivity type located above the first semiconductor region, an emitter (150, 250, 350, 450) having the first conductivity type disposed in the third semiconductor region, and a collector (170, 270, 370, 470) having the first conductivity type disposed in the third semiconductor region. In a particular embodiment, the third semiconductor region and the buried semiconductor region deplete the first semiconductor region in response to a reverse bias applied between the second semiconductor region and the third semiconductor region.

REFERENCES:
patent: 5126806 (1992-06-01), Sakurai et al.
patent: 5343052 (1994-08-01), Oohata et al.
patent: 5920087 (1999-07-01), Nakagawa et al.
patent: 5977569 (1999-11-01), Li
patent: 6339243 (2002-01-01), Kwon et al.
patent: 6888710 (2005-05-01), Mallikarjunaswamy et al.
patent: 2002/0005559 (2002-01-01), Suzuki
patent: 2004/0084744 (2004-05-01), Khemka et al.

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