Semiconductor device and method of manufacture

Details Semiconductor device and method of manufacture Semiconductor device and method of manufacture

2005-05-31

2005-05-31

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S353000, C438S357000, C438S359000, C438S360000, C438S369000

Reexamination Certificate

active

06900105

ABSTRACT:
In a semiconductor manufacturing method, an emitter region (211) and a base enhancement region (207) are formed to provide linear voltage, capacitance and low resistance characteristics. In the manufacturing method, a semiconductor device (200) is formed on a silicon substrate layer (101) with an epitaxial layer (203). Trenches (233) are cut into the epitaxial layer (203) and filled with oxide (601) to provide reduced junction capacitance and reduced base resistance. The emitter region (211) and the base enhancement region (207) are simultaneously formed through an anneal process.

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