Semiconductor device and method of making the same

Details Semiconductor device and method of making the same Semiconductor device and method of making the same

1996-12-11

1999-06-08

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257360, 257362, 257378, 257409, 257487, 257577, H01L 2972

Patent

active

059106751

ABSTRACT:
A semiconductor device includes a metal terminal provided on a semiconductor substrate and a protection element. The protection element includes an insulated gate field-effect transistor. The transistor has a first diffusion layer of a reverse conductive-type formed on one conductive type region of the semiconductor substrate and connected to the metal terminal, as its source. The transistor also includes a second diffusion layer of a reverse conductive-type connected to an electrode wire having a constant electric potential, as its source, and has a gate electrode connected to the electrode wire. A lateral bipolar transistor includes a third diffusion layer of a reverse conductive-type formed with a constant spaced distance with respect to the second diffusion layer and connected to the metal terminal, as its collector, and also has the second diffusion layer as its emitter, and furthermore has the one conductive-type region as its base. Thus, a semiconductor device is protected from an electrostatic discharge (ESD) breakdown device even though having high density and a high operating speed.

REFERENCES:
patent: 5449939 (1995-09-01), Horiguchi et al.
patent: 5679972 (1997-10-01), Kim

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