Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-12-21
2000-07-04
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257349, 257404, 438207, 438217, 438289, H01L 29167, H01L 29207
Patent
active
060842695
ABSTRACT:
A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a dielectric layer (24) to provide electrical isolation. The semiconductor device (10) includes a drain extension region (101) that extend from a drain region (44) to a gate structure (20). The semiconductor device (10) also has a conductive structure (105) that is adjacent to the gate structure (20).
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Davies Robert B.
Sudhama Chandrasekhara
Monin, Jr. Donald L.
Motorola Inc.
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