Semiconductor device and method of making

Details Semiconductor device and method of making Semiconductor device and method of making

1997-01-31

1998-03-31

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257565, 438373, 438532, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

057341940

ABSTRACT:
A semiconductor device (10) is formed in a semiconductor substrate (11) that acts as a collector region. A base region (12) is formed in the semiconductor substrate (11) and an emitter region (52) is formed such that it contacts at least a portion of the base region (12). A conductive layer (28) is used to provide electrical connection to the emitter region (52). The portion of the conductive layer (28) above the emitter region (52) is counter-doped to address the problems of an interfacial oxide layer (27) that exists between the emitter region (52) and the conductive layer (28).

REFERENCES:
patent: 5055427 (1991-10-01), Haskell
patent: 5438007 (1995-08-01), Vinal et al.
C.R. Bolognesi et al., "Impact of Flourine Incorporation in the Polysilicon Emitter of NPN Bipolar Transistors", IEEE Electron Device Letters, vol. 16, No. 5, May 1995, pp. 172-174.
T. Gravier et al., "Flourine Effects in n-p-n Double-Diffused Polysilicon Emitter Bipolar Transistors", IEEE Electron Device Letters, vol. 17, No. 9, Sep. 1996, pp. 434-436.

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