Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2000-08-14
2002-11-05
Cuneo, Kamand (Department: 2827)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C228S180220
Reexamination Certificate
active
06475897
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device having a so-called chip-size package structure in which a size thereof is equal to an integrated circuit (IC) chip, and to a method of manufacturing the chip-size package.
2. Description of the Related Art
IC packages called chip-size packages have been manufactured in such a manner that they are formed after the step of separating their IC chips from each other.
Conventional IC packages necessarily have a certain amount of marginal portion such as to enable ICs to be packed therein, and are substantially larger in size than the ICs although they are called “chip-size packages”.
Moreover, the process of manufacturing such IC packages is complicated and requires a high manufacturing cost, and the manufacturing period is long.
SUMMARY OF THE INVENTION
In view of the above-described problem, an object of the present invention is to provide a method of manufacturing IC packages in the wafer state, and an IC package having the same size as its IC chip. That is, bumps are bonded to electrode pads of chips on a wafer, a protective material is applied thereto, and bump portions are exposed by a masking technique. Thereafter, the wafer is cut along scribe lines to complete IC packages.
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Adams & Wilks
Chambliss Alonzo
Cuneo Kamand
Seiko Instruments Inc.
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