Semiconductor device and method of forming double-sided...

Details Semiconductor device and method of forming double-sided... Semiconductor device and method of forming double-sided...

2008-05-27

2010-02-23

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S113000, C438S675000, C438S667000, C257S620000

Reexamination Certificate

active

07666711

ABSTRACT:
A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

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