Semiconductor device and method of forming an interposer...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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C438S667000, C257SE21500, C257SE21511

Reexamination Certificate

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07838337

ABSTRACT:
A semiconductor device is fabricated by providing a carrier for supporting the semiconductor device. A first semiconductor die is mounted to the carrier. The first semiconductor die has a contact pad. A first dummy die is mounted to the carrier. The first dummy die has a through-silicon via (TSV). The first semiconductor die and the first dummy die are encapsulated using a wafer molding material. A first interconnect structure is formed over the first semiconductor die and the first dummy die. The first interconnect structure is connected to the contact pad of the first semiconductor die and the TSV of the first dummy die. The carrier is removed and a second interconnect structure is formed over the first semiconductor die and the first dummy die. The second interconnect structure is connected to the TSV of the first dummy die. A semiconductor package is connected to the second interconnect structure.

REFERENCES:
patent: 2009/0218671 (2009-09-01), Kuwabara
patent: 2009/0261460 (2009-10-01), Kuan et al.
patent: 2009/0267219 (2009-10-01), Trezza
patent: 2009/0321947 (2009-12-01), Pratt

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