Semiconductor device and method of forming an interconnect...

Details Semiconductor device and method of forming an interconnect... Semiconductor device and method of forming an interconnect...

2008-12-10

2010-06-22

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S107000, C438S108000, C438S111000, C438S113000, C438S118000, C257SE21508

Reexamination Certificate

active

07741148

ABSTRACT:
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A portion of a second side of the substrate, opposite the first side of the substrate, is removed to reduce its thickness. The encapsulant maintains substrate robustness during thinning process. A TSV is formed through the second side of the substrate to the first interconnect structure. A second interconnect structure is formed in the TSV. The TSV has a first insulating layer formed over the second side of the substrate and first conductive layer formed over the first insulating layer and into the TSV. The second interconnect structure has a second conductive layer formed over the first conductive layer in an area away from the TSV.

REFERENCES:
patent: 6002169 (1999-12-01), Chia et al.
patent: 2007/0077747 (2007-04-01), Heck et al.

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