Semiconductor device and method of fabrication thereof

Details Semiconductor device and method of fabrication thereof Semiconductor device and method of fabrication thereof

1997-04-22

2000-07-04

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438231, 438514, 438520, 438528, 438530, 438531, 438536, 438683, H01L 2100, H01L 2184

Patent

active

060837802

ABSTRACT:
A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a silicide for reducing the resistance of a shallow-junction diffused layer may not be prevented by the knock-on phenomenon of oxygen, thereby reduce the fabrication cost. A silicon nitride film, which is used as a protective film for ion implantation into a substrate and a gate polysilicon, is processed into side walls of the gate polysilicon thereby to omit the step of forming side walls by a silicon oxide film. Further, in the case where boron is diffused into the gate polysilicon, boron diffusion is suppressed by nitrogen knock-on, thereby preventing boron from going through the gate oxide film.

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