Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1998-11-12

1999-09-28

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438795, 438486, H01L 2100, H01L 2184

Patent

active

059602686

ABSTRACT:
A gate oxide film is formed on a thin-film SOI substrate or on a single crystalline silicon substrate and a gate is formed on the gate oxide film. The surfaces of a single crystalline silicon at diffusion layer regions on opposite sides of the gate are cleaned and an amorphous silicon film is formed thereon and on the side walls of the gate. Impurity ions are implanted in the amorphous silicon film, which is then converted into recrystallized silicon films by annealing. An interlayer insulator film is formed and another annealing is conducted. As a result, impurity ions in the recrystallized silicon films diffuse into the diffusion layer region of the single crystalline silicon and are activated to form a source and a drain.

REFERENCES:
patent: 5780896 (1998-07-01), Ono
patent: 5888857 (1999-03-01), Zhang et al.
C. Carter et al.; Appl. Phys. Lett. vol. 44 No. 4; pp. 459-461, Feb. 15, 1994.
K. Terada et al., A CMOS/Partial-SOI Structure for Future ULSIs, IEEE, p. 37, Oct. 1988.
T. Hashimoto et al., A .2um Bipolar CMOS Tech. on Bonded SOI with Copper Metallization for Ultra High-Speed Processors, IEDM, pp. 209-212, Sep. 1998.

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