Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-01-01

2008-01-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23117, C257SE23030

Reexamination Certificate

active

07314826

ABSTRACT:
A method of fabricating a semiconductor device includes forming a gate insulating film on an upper surface of a silicon substrate, forming a polycrystalline silicon film on the gate insulating film, and etching the polycrystalline silicon film, the gate insulating film, and the silicon substrate with a patterned coating type carbon film and a silicon nitride film so that first and second trenches are simultaneously formed. The first trench has a first width and a first depth and the second trench has a second width larger than the first width and the second depth larger than the first depth.

REFERENCES:
patent: 5562801 (1996-10-01), Nulty
patent: 7008834 (2006-03-01), Nakai et al.
patent: 2005/0124118 (2005-06-01), Smith et al.
patent: 06291193 (1994-10-01), None
patent: 2000-323564 (2000-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2777284