Semiconductor device and method of fabricating the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S622000, C438S637000, C438S659000, C438S687000, C257SE21218, C257SE21252, C257SE21576, C257SE21589, C257SE21591

Reexamination Certificate

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08008186

ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a wiring formed in predetermined pattern above the semiconductor substrate, a first insulating film lying right under the wiring, and a second insulating film lying in a peripheral portion other than a portion right under the wiring, in which a surface layer of the first insulating film lying in a boundary surface between the first insulating film and the second insulating film is chemically modified to reinforce the surface layer.

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