Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1998-04-24

2000-10-17

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438160, 438166, 438172, H01L 2100

Patent

active

061330752

ABSTRACT:
There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

REFERENCES:
patent: 5605847 (1997-02-01), Zhang
patent: 5886364 (1999-03-01), Zhang

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