Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-08
2011-02-08
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S382000, C257S384000, C257SE29135, C257SE29146, C257SE29156
Reexamination Certificate
active
07884399
ABSTRACT:
A semiconductor device and a method of fabricating the same include a gate electrode formed over the silicon substrate, the gate electrode including low-concentration conductive impurity regions, a high-concentration conductive impurity region formed between the low-concentration conductive impurity regions and a first silicide layer formed over the high-concentration conductive impurity region, and contact electrodes including a first contact electrode connected electrically to the gate electrode and a second contact electrode connected electrically to source/drain regions. The first contact electrode contacts the uppermost surface of the gate electrode and a sidewall of the gate electrode. The gate electrode can be easily connected to the contact electrode, the high-concentration region can be disposed only on the channel region, making it possible to maximize overall performance of the semiconductor device.
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Dongbu Hi-Tek Co., Ltd.
Sefer Ahmed
Sherr & Vaughn, PLLC
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