Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-02-08

2011-02-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000, C257SE21410, C257SE29262, C257SE29257

Reexamination Certificate

active

07884419

ABSTRACT:
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device includes a first conductive well region in a semiconductor substrate and a second conductive well region on or in the first conductive well region. A gate electrode is in a trench on a gate insulation layer, and the trench is in the second conductive region and the first conductive well region. A drain includes a drain insulation layer, a (polysilicon) shield layer, and drain plug. The drain insulation layer is in a trench in the second conductive region and the first conductive well region. The shield layer encloses the drain plug. A lower portion of the drain plug contacts the second conductive well region. A first conductive source region is at a side of the gate electrode.

REFERENCES:
patent: 6037202 (2000-03-01), Witek
patent: 6949432 (2005-09-01), Blanchard
patent: 6998678 (2006-02-01), Werner et al.
patent: 7812409 (2010-10-01), Hshieh

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