Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1998-11-13

1999-10-19

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, 257401, H01L 2976

Patent

active

059693967

ABSTRACT:
A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate. A drain region is formed on the semiconductor substrate. An element separating region is formed on the semiconductor substrate. The drain region includes a heavily doped region and a lightly doped region. The heavily doped region is higher in impurity concentration than the lightly doped region. The lightly doped region has a first portion extending between the gate electrode and the heavily doped region. The lightly doped region has a second portion extending between the element separating region and the heavily doped region.

REFERENCES:
patent: 5164806 (1992-11-01), Nagatomo et al.
patent: 5831317 (1998-11-01), Shimazaki

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