Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1998-08-07

2000-10-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257341, 438212, H01L 2976, H01L 2994, H01L 31113, H01L 31119, H01L 31062

Patent

active

061371351

ABSTRACT:
The present invention improves the characteristic of a trench-type vertical MOSFET. When a trench 23 serving as a gate 25 is formed, it is made in a shape of ".gamma." which is convex toward the inside of the trench. Thus, the surface area of the trench is reduced so that both gate-source capacitance and gate-drain capacitance can be reduced, thereby shortening the switching time of the MOSFET.

REFERENCES:
patent: 3798514 (1974-03-01), Hayashi et al.
patent: 5473176 (1995-12-01), Kakumoto
patent: 5714781 (1998-02-01), Yamamoto et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1966425