Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-08-25
2000-02-15
Chapman, Mark
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438503, 136249, 136260, 136262, H01L 3106, H01L 31078
Patent
active
060252529
ABSTRACT:
In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
REFERENCES:
patent: 3457467 (1969-07-01), Amsterdam et al.
patent: 4163987 (1979-08-01), Kamath et al.
patent: 4234358 (1980-11-01), Celler et al.
patent: 4255211 (1981-03-01), Fraas
patent: 4445965 (1984-05-01), Milnes
patent: 4584025 (1986-04-01), Takaoka et al.
patent: 4665610 (1987-05-01), Barth
patent: 4670969 (1987-06-01), Yamada et al.
patent: 4681982 (1987-07-01), Yoshida
patent: 4789644 (1988-12-01), Meda
patent: 4881979 (1989-11-01), Lewis
patent: 5068203 (1991-11-01), Logsdon et al.
patent: 5095401 (1992-03-01), Zavracky
patent: 5180960 (1993-01-01), Czubatyi et al.
patent: 5273829 (1993-12-01), Bassous et al.
patent: 5510276 (1996-04-01), Diem et al.
patent: 5554304 (1996-09-01), Suzuki
patent: 5796136 (1998-08-01), Shinkawata
patent: 5814850 (1998-09-01), Iwasa
patent: 5850091 (1998-12-01), Li et al.
English Translation of Japanese Patent Application 1-320291, Dec. 1989.
Patent Abstracts of Japan, vol. 14, No. 543 (C-783), Nov. 30, 1990, JP 02-229790, Sep. 12, 1990.
Patent Abstracts of Japan, vol. 15, No. 295 (E-1094), Jul. 26, 1991, JP 03-104209, May 1, 1991.
S.M. Rossnagel et al., "Ion Beam Deposition, Film Modification and Synthesis", MRS Buleetin, Union Patent, Dec. 1986, vol. XIII, No. 12, pp. 40-51.
J.S. Williams, "Subsurface Processing of Electronic Materials Assisted By Atomic Displacements", MRS Bulletin, vol. 17, No. 6 (Jun. 1992), pp. 47-51 .
Asakawa Toshifumi
Hikawa Tetsuo
Kosaka Daisuke
Sawada Takashi
Shindo Masahiro
Chapman Mark
Mega Chips Corporation
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