Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2009-06-30

2011-10-11

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S430000, C438S587000, C438S637000, C438S638000, C438S700000, C438S745000

Reexamination Certificate

active

08034714

ABSTRACT:
Provided are a semiconductor device and a method of fabricating the semiconductor memory device. A contact plug is formed by wet etching. An aspect ratio of SAC is decreased and SAC fail is reduced so that a process margin is secured. The semiconductor device includes a semiconductor substrate comprising an active region and a device isolation layer defining the active region, a conductive pattern formed on the semiconductor substrate, and a nitride layer formed on the semiconductor substrate perpendicularly to the conductive pattern.

REFERENCES:
patent: 100756807 (2007-08-01), None
patent: 1020080084064 (2008-09-01), None
patent: 1020080088909 (2008-10-01), None

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