Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-04-14

2011-10-04

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S337000

Reexamination Certificate

active

08030705

ABSTRACT:
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device can provide a trench MOS transistor having an up-drain structure. The semiconductor device can include a first conductive type well in a semiconductor substrate, a second conductive type well on the first conductive type well, trenches formed by removing portions of the second conductive type well and the first conductive type well; gates provided in the trenches with a gate dielectric being between each gate and the walls of the trench, a first conductive type source region and a second conductive type body region on the second conductive type well, the first conductive type source region surrounding a lateral surface of the gate, and a common drain between the gates, the common drain being connected to the first conductive type well.

REFERENCES:
patent: 6320223 (2001-11-01), Hueting et al.
patent: 6472709 (2002-10-01), Blanchard
patent: 6475866 (2002-11-01), Hofmann et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6627951 (2003-09-01), Hshieh et al.
patent: 6762098 (2004-07-01), Hshieh et al.
patent: 6812526 (2004-11-01), Blanchard
patent: 6949432 (2005-09-01), Blanchard
patent: 7348628 (2008-03-01), Yoon et al.
patent: 7612408 (2009-11-01), Zundel et al.
patent: 7700440 (2010-04-01), Kao
patent: 7732876 (2010-06-01), Grebs et al.
patent: 7781287 (2010-08-01), Yoon et al.
patent: 7812409 (2010-10-01), Hshieh
patent: 2001/0000919 (2001-05-01), Kocon
patent: 2002/0175412 (2002-11-01), Kocon et al.
patent: 2003/0207538 (2003-11-01), Hshieh et al.
patent: 2005/0116267 (2005-06-01), Zundel et al.
patent: 2007/0034911 (2007-02-01), Kao
patent: 2008/0160697 (2008-07-01), Kao
patent: 2008/0258214 (2008-10-01), Jang
patent: 2009/0001485 (2009-01-01), Kim et al.
patent: 2009/0065859 (2009-03-01), Jang et al.
patent: 2009/0095999 (2009-04-01), Jang
patent: 2009/0212357 (2009-08-01), Risaki
patent: 11298000 (1999-10-01), None

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