Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-12-24

2011-10-25

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S387000, C438S396000, C438S397000, C438S257000

Reexamination Certificate

active

08044467

ABSTRACT:
A semiconductor device with reduced contact resistance between a substrate and a plug includes a gate electrode disposed over the substrate, the plug formed over the substrate at both sides of the gate electrode and having a sidewall with a positive slope, a capping layer disposed between the gate electrode and the plug, and a gate hard mask layer whose sidewall disposed over the gate electrode is extended to a top surface of the capping layer. By employing the capping layer having a sidewall with a negative slope, the plug having the sidewall with a positive slope can be formed regardless of a shape or profile of the sidewall of the gate electrode. As a result, the contact area between the substrate and the plug is increased.

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Office Action dated Sep. 7, 2010, for Korean application No. 10-2008-0082417.

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