Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2010-02-16

2011-11-22

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S284000, C438S595000

Reexamination Certificate

active

08062938

ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes: a square pole-shaped channel portion made from a first semiconductor layer formed on a substrate, and surrounded with four side faces; a gate electrode formed on a first side face of the channel portion, and a second side face of the channel portion opposite to the first side face through respective gate insulating films; a source region having a conductivity type different from that of the channel portion and being formed on a third side face of the channel portion, the source region including a second semiconductor layer having a lattice constant different from that of the first semiconductor layer and being formed directly on the substrate; and a drain region having a conductivity type different from that of the channel portion and being formed on a fourth side face of the channel portion opposite to the third side face, the drain region including the second semiconductor layer being formed directly on the substrate.

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