Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-24
2011-10-25
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S386000, C257SE21634
Reexamination Certificate
active
08044470
ABSTRACT:
Provided is a semiconductor device including a transistor that has a silicide layer formed over a semiconductor substrate. The gate electrode of each transistor is composed of a polysilicon electrode and the silicide layer formed thereon. Each transistor further has source/drain impurity-diffused layers composed of low-concentration doped regions and high-concentration doped regions, and silicide layers formed over the source/drain impurity-diffused layers. The surface of each silicide layer is positioned above the surface of the semiconductor substrate. The silicide layers contain a silicidation-suppressive metal, and have a concentration profile of the silicidation-suppressive metal over a region of the silicide layers ranging from the surface to a predetermined depth, such as increasing the concentration from the surface of each silicide layer in the depth-wise direction of the semiconductor substrate.
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Jer-shen Maa, et al., “Effect of Interlayer on thermal stability of nickel silicide”, 2001 American Vacuum Society, J. Vac. Sci. Technol. A 19(4), Jul. Aug. 2001, pp. 1595-1599.
McGinn IP Law Group PLLC
Nguyen Ha Tran T
Renesas Electronics Corporation
Scarlett Shaka
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