Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2009-03-04

2010-11-16

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S051000, C365S063000, C257S209000, C257S529000, C257SE21592, C257SE23149

Reexamination Certificate

active

07835211

ABSTRACT:
A semiconductor device is provided including a first fuse link having a copper-containing metal film, a second fuse link having a polysilicon film, a semiconductor substrate, and a field insulating film formed on the semiconductor substrate. The second fuse link is formed on the field insulating film. An interlayer insulating film is provided between the first fuse link and the second fuse link. The first fuse link is electrically connected to the second fuse link via a first plug formed in the interlayer insulating film.

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Chinese Office Action dated Jul. 4, 2008 with English Translation.

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