Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-10-31
2010-11-16
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S296000, C438S359000
Reexamination Certificate
active
07833875
ABSTRACT:
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
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Kim Jung-Hwan
Kim Tae-Hyun
Kim Yong-Seok
Leam Hun-Hyeoung
Nam Seok-Woo
F. Chau & Associates LLC
Le Thao P.
Samsung Electronics Co,. Ltd.
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