Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-12-28
2000-11-07
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257764, 257771, 257774, 438627, 438643, 438653, 438927, H01L 2348, H01L 2352, H01L 2940
Patent
active
061440973
ABSTRACT:
A semiconductor device comprising a semiconductor substrate including an electronic element, interlayer dielectric (silicon oxide layer and BPSG layer) formed on the semiconductor substrate, a contact hole formed in the interlayer dielectric, a barrier layer formed on the interlayer dielectric and contact hole, and a wiring layer formed on the barrier layer. In the barrier layer, metal oxide (titanium oxide) are scattered in an island-like configuration. The barrier layer is formed by depositing a layer that is used to form the barrier layer and then introducing oxygen into the layer. The step is achieved by depositing a layer for the barrier layer, exposing the layer in oxygen plasma under reduced pressure, and subjecting the layer to the thermal processing, or, alternatively by depositing a layer for the barrier layer and subjecting the layer to thermal processing in an atmosphere of oxygen. The semiconductor device of the present invention has a barrier layer with excellent barrier properties.
REFERENCES:
patent: 5502334 (1996-03-01), Shinohara
patent: 5561326 (1996-10-01), Ito et al.
patent: 5918149 (1999-06-01), Besser et al.
patent: 5985759 (1999-11-01), Kim et al.
Asahina Michio
Matsumoto Kazuki
Moriya Naohiro
Takeuchi Jun-ichi
Clark Jhihan B.
Hardy David
Seiko Epson Corporation
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