Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-30
2009-06-23
Pizarro, Marcos D. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S041000, C438S795000, C438S022000, C257SE21407
Reexamination Certificate
active
07550398
ABSTRACT:
A semiconductor device includes a silicon nitride (SiN) film provided on a crystal surface of a nitride semiconductor, the SiN film having a hydrogen content equal to or smaller than 15 percent.
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Komatani Tsutomu
Tanaka Masahiro
Anya Igwe U.
Eudyna Devices Inc.
Pizarro Marcos D.
Westerman, Hattori, Daniels & Adrian , LLP.
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