Semiconductor device and method of fabricating the same

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S041000, C438S795000, C438S022000, C257SE21407

Reexamination Certificate

active

07550398

ABSTRACT:
A semiconductor device includes a silicon nitride (SiN) film provided on a crystal surface of a nitride semiconductor, the SiN film having a hydrogen content equal to or smaller than 15 percent.

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