Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-08-22

2008-12-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S672000, C438S673000, C257S775000, C257SE21241, C257SE21256

Reexamination Certificate

active

07459391

ABSTRACT:
The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.

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patent: 6583047 (2003-06-01), Daniels et al.
patent: 2005/0151266 (2005-07-01), Yoshizawa et al.
patent: 2006/0063386 (2006-03-01), Tsai et al.
patent: 2002-353308 (2002-12-01), None
patent: 2003-017561 (2003-01-01), None
T. Mourier et al., “Porous low k pore sealing study for 65 nm and below technologies”, Proceedings of International Interconnect Technology Conference, 2003, pp. 245-247.
A. Bhanap et al., “Reparing Process-induced Damage to Porous Low-k ILDs by Post-Ash Treatment”, Proceedings of Advanced Metallization Conference, 2003.

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