Semiconductor device and method of fabricating the same

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Encapsulating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21503, C257SE21518

Reexamination Certificate

active

07413935

ABSTRACT:
A method of fabricating a semiconductor device includes hardening resin at a temperature that is less than or equal to the boiling point of the resin and until the hardening reaction ratio of the resin has reached at least 80%, the resin being disposed between a wiring board which has an interconnecting pattern and a semiconductor chip which has a plurality of electrodes and which is mounted on the wiring board in such a manner that the electrodes are in contact with the interconnecting pattern. A eutectic alloy joint is then formed between the electrodes and the interconnecting pattern.

REFERENCES:
patent: 6777814 (2004-08-01), Iwasaki et al.
patent: 6855578 (2005-02-01), Odegard et al.
patent: 6975036 (2005-12-01), Ohuchi
patent: 7141452 (2006-11-01), Sambasivam et al.
patent: 2003/0029559 (2003-02-01), Yamada et al.
patent: 2004/0082107 (2004-04-01), Shi et al.
patent: 2005/0087883 (2005-04-01), Hwee et al.
patent: 1319636 (2001-10-01), None
patent: 1427471 (2003-07-01), None
patent: A 02-007180 (1990-01-01), None
patent: A 11-330162 (1999-11-01), None
patent: A 2002-009111 (2002-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4018900

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.