Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-06-22

2008-08-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S680000, C438S692000, C257SE21170, C257SE21304, C257SE21229, C257SE21320, C257SE21267, C257SE21231, C257SE21218, C257SE21577

Reexamination Certificate

active

07416987

ABSTRACT:
According to the present invention, there is a provided a semiconductor device fabrication method having, forming a mask material in a surface portion of a semiconductor substrate, and forming a step having a projection by using the mask material; forming a dielectric film on the semiconductor substrate so as to fill the step and planarize an entire surface; annealing the dielectric film; etching back the dielectric film such that a surface of the dielectric film is positioned between upper and lower surfaces of the mask material; and removing the mask material to expose a surface of the projection of the semiconductor substrate.

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Notification of Reason for Rejection issued by the Japanese Patent Office on Feb. 20, 2007, for Japanese Patent Application No. 2003-399544, and English-Language transtation thereof.

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