Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-07-11

2008-10-21

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C257S752000, C257S762000

Reexamination Certificate

active

07439182

ABSTRACT:
A semiconductor and a method of fabricating the same are provided. The method includes: forming an insulation layer on a substrate; forming a trench by selectively etching the insulation layer; electroplating a copper layer in the trench and on the insulation layer under such conditions that a seam is formed at a top middle portion of the trench; and polishing the copper layer to form a copper metal line with the seam.

REFERENCES:
patent: 7030021 (2006-04-01), Han
patent: 2005/0095854 (2005-05-01), Uzoh et al.

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