Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1997-03-20
1999-11-16
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438166, H01L 2120
Patent
active
059857412
ABSTRACT:
A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
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Takemura Yasuhiko
Yamazaki Shunpei
Zhang Hongyong
Bowers Charles
Costellia Jeffrey L.
Semiconductor Energy Laboratory Co,. Ltd.
Sulsky Martin
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