Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-06-26
2007-06-26
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S344000, C257S408000
Reexamination Certificate
active
09454146
ABSTRACT:
There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a first gate electrode made of a semiconductor material and a second gate electrode made of a metal material. An n-channel TFT includes an LDD region, and a region overlapping with the gate electrode and a region not overlapping with the gate electrode are provided, so that a high electric field in the vicinity of a drain is relieved, and at the same time, an increase of an off current is prevented.
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Ohtani Hisashi
Suzawa Hideomi
Takayama Toru
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Crane Sara
Semiconductor Energy Laboratory Co,. Ltd.
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